@article{488ea0e0c89f4f61a87b8c833e99ea33,
title = "InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy",
abstract = "This letter investigates the dc characteristics of a double heterojunction bipolar transistor (DHBT) with a compressively strained InGaAsSb base, which is grown by solid-source molecular beam epitaxy. The novel InP/InGaAsSb HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower VCE offset voltage, and a junction ideality factor closer to unity than the conventional InP/InGaAs composite collector DHBT. These characteristics are attributed to the transistor's type-I B/E junction and type-II base/collector junction, which facilitates carrier transport for low power, high current density, and high-speed operation.",
keywords = "Heterojunction bipolar transistors (HBTs), InP/InGaAsSb, Molecular beam epitaxy (MBE)",
author = "Chen, {Shu Han} and Wang, {Sheng Yu} and Hsieh, {Rei Jay} and Chyi, {Jen Inn}",
note = "Funding Information: Manuscript received May 4, 2007; revised May 31, 2007. This work was supported in part by the National Science Council of Taiwan, R.O.C. under Contract NSC-95-2221-E-008-153, and in part by the Ministry of Economic Affairs, R.O.C. under Contract 94-EC-17-A-07-S1-0001. The review of this letter was arranged by Editor G. Meneghesso.",
year = "2007",
month = aug,
doi = "10.1109/LED.2007.901874",
language = "???core.languages.en_GB???",
volume = "28",
pages = "679--681",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "8",
}