InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy

Shu Han Chen, Sheng Yu Wang, Rei Jay Hsieh, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

16 引文 斯高帕斯(Scopus)

摘要

This letter investigates the dc characteristics of a double heterojunction bipolar transistor (DHBT) with a compressively strained InGaAsSb base, which is grown by solid-source molecular beam epitaxy. The novel InP/InGaAsSb HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower VCE offset voltage, and a junction ideality factor closer to unity than the conventional InP/InGaAs composite collector DHBT. These characteristics are attributed to the transistor's type-I B/E junction and type-II base/collector junction, which facilitates carrier transport for low power, high current density, and high-speed operation.

原文???core.languages.en_GB???
頁(從 - 到)679-681
頁數3
期刊IEEE Electron Device Letters
28
發行號8
DOIs
出版狀態已出版 - 8月 2007

指紋

深入研究「InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy」主題。共同形成了獨特的指紋。

引用此