@inproceedings{d9a9ebe9e6bb44ec9506b31b7cef2462,
title = "InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth",
abstract = "The optical properties of InGaAsN QW grown on AlGaAs/GaAs cladding layers have been investigated. Al contamination in the quantum well due to memory effect should be the root cause for the degradation of optical quality. We not only use proposed two-step growth but demonstrate a new method for reducing the Al contamination by growth interruption with DMHy. This approach shows good optical properties as well as two-step growth and more economic compared to the reported ones.",
author = "Yeh, {Nien Tze} and Chiu, {Pei Chin} and Tsai, {Yao Tsong} and Hong, {Chao Chi} and Hsieh, {Tung Po} and Ho, {Wen Jeng} and Chyi, {Jen Inn}",
year = "2005",
doi = "10.1109/ICIPRM.2005.1517505",
language = "???core.languages.en_GB???",
isbn = "0780388917",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "374--377",
booktitle = "2005 International Conference on Indium Phosphide and Related Materials",
note = "2005 International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",
}