InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking

Shu Han Chen; Meng Lin Lee; Po Han Chen; Sheng Yu Wang; Ming Yuan Tseng; Jen Inn Chyi

doi:10.1109/CLEOPR.2003.1276986

InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking

Shu Han Chen, Meng Lin Lee, Po Han Chen, Sheng Yu Wang, Ming Yuan Tseng, Jen Inn Chyi

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

InGaAs/InP double heterojunction bipolar transistor with low offset voltage and low collector current blocking effect have been obtained using a combination of InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. It is found that increasing the doping concentration of the n⁺-InP layer is more effective in lowering current blocking effect than increasing the InGaAs BC spacer thickness. Increasing base doping concentration is shown to be effective as well.

原文	???core.languages.en_GB???
主出版物標題	CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
主出版物子標題	Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	433
頁數	1
ISBN（電子）	0780377664
DOIs	https://doi.org/10.1109/CLEOPR.2003.1276986
出版狀態	已出版 - 2003
事件	5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan 持續時間: 15 12月 2003 → 19 12月 2003

出版系列

名字	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
卷	2

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
國家/地區	Taiwan
城市	Taipei
期間	15/12/03 → 19/12/03

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10.1109/CLEOPR.2003.1276986

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Chen, S. H., Lee, M. L., Chen, P. H., Wang, S. Y., Tseng, M. Y., & Chyi, J. I. (2003). InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking. 於 CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings (頁 433). 文章 1276986 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; 卷 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2003.1276986

Chen, Shu Han ; Lee, Meng Lin ; Chen, Po Han 等. / InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking. CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. 頁 433 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

@inproceedings{1642e5ec94654babaf8bce87a36f6cb4,

title = "InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking",

abstract = "InGaAs/InP double heterojunction bipolar transistor with low offset voltage and low collector current blocking effect have been obtained using a combination of InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. It is found that increasing the doping concentration of the n+-InP layer is more effective in lowering current blocking effect than increasing the InGaAs BC spacer thickness. Increasing base doping concentration is shown to be effective as well.",

author = "Chen, {Shu Han} and Lee, {Meng Lin} and Chen, {Po Han} and Wang, {Sheng Yu} and Tseng, {Ming Yuan} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 ; Conference date: 15-12-2003 Through 19-12-2003",

year = "2003",

doi = "10.1109/CLEOPR.2003.1276986",

language = "???core.languages.en_GB???",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "433",

booktitle = "CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics",

}

Chen, SH, Lee, ML, Chen, PH, Wang, SY, Tseng, MY & Chyi, JI 2003, InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking. 於 CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings., 1276986, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 卷 2, Institute of Electrical and Electronics Engineers Inc., 頁 433, 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003, Taipei, Taiwan, 15/12/03. https://doi.org/10.1109/CLEOPR.2003.1276986

InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking. / Chen, Shu Han; Lee, Meng Lin; Chen, Po Han 等.
CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 433 1276986 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; 卷 2).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking

AU - Chen, Shu Han

AU - Lee, Meng Lin

AU - Chen, Po Han

AU - Wang, Sheng Yu

AU - Tseng, Ming Yuan

AU - Chyi, Jen Inn

PY - 2003

Y1 - 2003

N2 - InGaAs/InP double heterojunction bipolar transistor with low offset voltage and low collector current blocking effect have been obtained using a combination of InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. It is found that increasing the doping concentration of the n+-InP layer is more effective in lowering current blocking effect than increasing the InGaAs BC spacer thickness. Increasing base doping concentration is shown to be effective as well.

AB - InGaAs/InP double heterojunction bipolar transistor with low offset voltage and low collector current blocking effect have been obtained using a combination of InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. It is found that increasing the doping concentration of the n+-InP layer is more effective in lowering current blocking effect than increasing the InGaAs BC spacer thickness. Increasing base doping concentration is shown to be effective as well.

UR - http://www.scopus.com/inward/record.url?scp=84955272191&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2003.1276986

DO - 10.1109/CLEOPR.2003.1276986

M3 - 會議論文篇章

AN - SCOPUS:84955272191

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

SP - 433

BT - CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003

Y2 - 15 December 2003 through 19 December 2003

ER -

Chen SH, Lee ML, Chen PH, Wang SY, Tseng MY, Chyi JI. InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking. 於 CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 433. 1276986. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). doi: 10.1109/CLEOPR.2003.1276986

InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking

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