Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates

Robert D. Grober, H. D. Drew, Jen Inn Chyi, S. Kalem, H. Morkoç

研究成果: 雜誌貢獻期刊論文同行評審

51 引文 斯高帕斯(Scopus)

摘要

We report the results of infrared photoluminescence and optical transmission measurements of InAs epilayers grown on both Si and GaAs substrates. Photoluminescence reveals four well-defined peaks associated with band-to-band transitions and impurity/defect associated transitions. The spectra of the epilayers grown on Si are red shifted by roughly 15 meV relative to that of the epilayers grown on GaAs. In addition, optical transmission measurements reveal two intrinsic absorption edges for the epilayers grown on Si. These data are interpreted in terms of biaxial strain induced between the epilayer and the substrate due to differing indices of linear thermal expansion.

原文???core.languages.en_GB???
頁(從 - 到)4079-4081
頁數3
期刊Journal of Applied Physics
65
發行號10
DOIs
出版狀態已出版 - 1989

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