Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

L. J. Chen, S. L. Cheng, H. M. Luo, H. Y. Huang, Y. C. Peng, B. Y. Tsui, C. J. Tsai, S. S. Guo

研究成果: 會議貢獻類型會議論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi2 and TiSi2 films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films.

原文???core.languages.en_GB???
頁面256-259
頁數4
出版狀態已出版 - 1998
事件Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
持續時間: 21 10月 199823 10月 1998

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???event.eventtypes.event.conference???Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
城市Beijing, China
期間21/10/9823/10/98

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