Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

L. J. Chen; S. L. Cheng; H. M. Luo; H. Y. Huang; Y. C. Peng; B. Y. Tsui; C. J. Tsai; S. S. Guo

Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

L. J. Chen, S. L. Cheng, H. M. Luo, H. Y. Huang, Y. C. Peng, B. Y. Tsui, C. J. Tsai, S. S. Guo

化學工程與材料工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi₂ and TiSi₂ films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films.

原文	???core.languages.en_GB???
頁面	256-259
頁數	4
出版狀態	已出版 - 1998
事件	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China 持續時間: 21 10月 1998 → 23 10月 1998

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???event.eventtypes.event.conference???	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
城市	Beijing, China
期間	21/10/98 → 23/10/98

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title = "Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si",

abstract = "The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi2 and TiSi2 films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films.",

author = "Chen, {L. J.} and Cheng, {S. L.} and Luo, {H. M.} and Huang, {H. Y.} and Peng, {Y. C.} and Tsui, {B. Y.} and Tsai, {C. J.} and Guo, {S. S.}",

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pages = "256--259",

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TY - CONF

T1 - Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

AU - Chen, L. J.

AU - Cheng, S. L.

AU - Luo, H. M.

AU - Huang, H. Y.

AU - Peng, Y. C.

AU - Tsui, B. Y.

AU - Tsai, C. J.

AU - Guo, S. S.

PY - 1998

Y1 - 1998

N2 - The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi2 and TiSi2 films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films.

AB - The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi2 and TiSi2 films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films.

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M3 - 會議論文

AN - SCOPUS:0032226794

SP - 256

EP - 259

Y2 - 21 October 1998 through 23 October 1998

ER -

Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

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