Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

Ying Tsan Tang, Der San Chuu, Kao Chin Lin

研究成果: 雜誌貢獻期刊論文同行評審

摘要

We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate. We find that the electronphonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency. This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage. The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads (n=0) and the first phonon sideband (n=1). These anomalies are consistent with the experimental observations in transport experiments.

原文???core.languages.en_GB???
頁(從 - 到)87-92
頁數6
期刊Solid State Communications
151
發行號1
DOIs
出版狀態已出版 - 1月 2011

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