Indium profiles in InGaAs with heavy ion RBS

M. Döbeli; P. C. Haubert; T. A. Tombrello; J. I. Chyi; D. Huang; H. Morkoç

doi:10.1016/0168-583X(90)90604-S

Indium profiles in InGaAs with heavy ion RBS

M. Döbeli, P. C. Haubert, T. A. Tombrello, J. I. Chyi, D. Huang, H. Morkoç

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The indium profile of MBE-grown In_xGa_1-xAs/GaAs single quantum well structures and In_xGa_1-xAs layers on InAlAs buffer layers have been measured with heavy ion Rutherford backscattering using a time-of-flight detector. The depth resolution of the method is better than 30 Å at the sample surface using 15 MeV ³⁵Cl ions. The results for the average indium molar fraction are compared with photo reflectance measurements. The aluminum molar fraction in the InAlAs buffer layer has been profiled by nuclear reaction analysis.

原文	???core.languages.en_GB???
頁（從 - 到）	72-78
頁數	7
期刊	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
卷	52
發行號	1
DOIs	https://doi.org/10.1016/0168-583X(90)90604-S
出版狀態	已出版 - 11月 1990

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10.1016/0168-583X(90)90604-S

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@article{54af7fbcdeb94bff8fe56cd15e808482,

title = "Indium profiles in InGaAs with heavy ion RBS",

abstract = "The indium profile of MBE-grown InxGa1-xAs/GaAs single quantum well structures and InxGa1-xAs layers on InAlAs buffer layers have been measured with heavy ion Rutherford backscattering using a time-of-flight detector. The depth resolution of the method is better than 30 {\AA} at the sample surface using 15 MeV 35Cl ions. The results for the average indium molar fraction are compared with photo reflectance measurements. The aluminum molar fraction in the InAlAs buffer layer has been profiled by nuclear reaction analysis.",

author = "M. D{\"o}beli and Haubert, {P. C.} and Tombrello, {T. A.} and Chyi, {J. I.} and D. Huang and H. Morko{\c c}",

note = "Funding Information: * Supported in part by the National Science Foundation (DMR88-11795). ++ Permanent address: Department of Physics, University of South Florida, Tampa, Florida 33620, USA. + Supported in part by a fellowship from the Swiss National Science Foundation.",

year = "1990",

month = nov,

doi = "10.1016/0168-583X(90)90604-S",

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T1 - Indium profiles in InGaAs with heavy ion RBS

AU - Döbeli, M.

AU - Haubert, P. C.

AU - Tombrello, T. A.

AU - Chyi, J. I.

AU - Huang, D.

AU - Morkoç, H.

N1 - Funding Information: * Supported in part by the National Science Foundation (DMR88-11795). ++ Permanent address: Department of Physics, University of South Florida, Tampa, Florida 33620, USA. + Supported in part by a fellowship from the Swiss National Science Foundation.

PY - 1990/11

Y1 - 1990/11

N2 - The indium profile of MBE-grown InxGa1-xAs/GaAs single quantum well structures and InxGa1-xAs layers on InAlAs buffer layers have been measured with heavy ion Rutherford backscattering using a time-of-flight detector. The depth resolution of the method is better than 30 Å at the sample surface using 15 MeV 35Cl ions. The results for the average indium molar fraction are compared with photo reflectance measurements. The aluminum molar fraction in the InAlAs buffer layer has been profiled by nuclear reaction analysis.

AB - The indium profile of MBE-grown InxGa1-xAs/GaAs single quantum well structures and InxGa1-xAs layers on InAlAs buffer layers have been measured with heavy ion Rutherford backscattering using a time-of-flight detector. The depth resolution of the method is better than 30 Å at the sample surface using 15 MeV 35Cl ions. The results for the average indium molar fraction are compared with photo reflectance measurements. The aluminum molar fraction in the InAlAs buffer layer has been profiled by nuclear reaction analysis.

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U2 - 10.1016/0168-583X(90)90604-S

DO - 10.1016/0168-583X(90)90604-S

M3 - 期刊論文

AN - SCOPUS:24444454351

VL - 52

SP - 72

EP - 78

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1

ER -

Indium profiles in InGaAs with heavy ion RBS

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