摘要
InGaN/GaN quantum wells (QWs) grown at identical conditions on m-plane GaN and c-plane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with m- and c-plane surface orientations. Cathodoluminescence (CL) spectra of m-plane QWs revealed shorter wavelength and no blueshift with increasing CL probe current in accordance with previous reports. Relative indium compositions were estimated by high-resolution X-ray diffraction to be 5.1 and 13.9% for m-plane and c-plane QWs, respectively. Cross-sectional transmission electron microscopy images revealed that the well widths of the m-plane QWs were noticeably thicker than those of the c-plane QWs. The lower indium compositions and thicker well widths of the m-plane QWs indicated that different indium incorporation and diffusion occurred in the structures grown on the GaN substrate, which is attributed to its surface off-cut toward [0001] and the higher thermal conductivity with respect to that of sapphire.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 559-564 |
頁數 | 6 |
期刊 | Physica Status Solidi (A) Applications and Materials Science |
卷 | 209 |
發行號 | 3 |
DOIs | |
出版狀態 | 已出版 - 3月 2012 |