Increasing more bonding energy in nitrogen plasma-activated wafer bonding by HF-Dip

F. S. Lo, C. C. Chiang, C. Li, T. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

Nitrogen plasma-activated wafer bonding provides high-strength Si/Si wafer bonding. We found that a hydrofluoric (HF) pre-dip treatment can increase more bonding energy. By reducing drastically the annealing temperature to as low as 75°C, HF-dip and subsequent nitrogen-plasma activation can result in an bonding energy of the Si/Si pair comparable to the silicon fracture strength (2500 mJ/m2). In Si3N4/Si3N 4 wafer bonding, the room-temperature bonding results in interface energy as high as 537 mJ/m2 and then reaches the silicon fracture strength through annealing at 200°C for 24 hours. We suggest that the high-strength bonding mechanism is the formation of Si-NH-Si bonds during annealing.

原文???core.languages.en_GB???
頁(從 - 到)P102-P104
期刊ECS Solid State Letters
3
發行號8
DOIs
出版狀態已出版 - 2014

指紋

深入研究「Increasing more bonding energy in nitrogen plasma-activated wafer bonding by HF-Dip」主題。共同形成了獨特的指紋。

引用此