TY - JOUR
T1 - Incorporation of Mg in GaN grown by metal-organic chemical vapor deposition
AU - Lee, Chia Ming
AU - Hong, Hwen Fen
AU - Chuo, Chang Cheng
AU - Nee, Tzer En
AU - Chyi, Jen Inn
PY - 2000/8
Y1 - 2000/8
N2 - The incorporation of Mg in GaN grown by metal-organic chemical vapor deposition on a sapphire substrate is investigated. From the secondary ion mass spectroscopy (SIMS) profiles of Mg-doped GaN films, it is found that the chemical concentration of Mg increases with growth time, i.e. toward the surface. Mg did not achieve saturation concentration for samples of even 2.5 μm-thick. The effects of growth conditions, such as substrate temperature, growth ambient conditions, and V/III ratio, on the incorporation of Mg were also examined. In addition to bulk Mg-doped samples, the behavior of Mg in p-n homojunction as well as InGaN/GaN multiple quantum well (MQW) light emitting diode structures were also studied.
AB - The incorporation of Mg in GaN grown by metal-organic chemical vapor deposition on a sapphire substrate is investigated. From the secondary ion mass spectroscopy (SIMS) profiles of Mg-doped GaN films, it is found that the chemical concentration of Mg increases with growth time, i.e. toward the surface. Mg did not achieve saturation concentration for samples of even 2.5 μm-thick. The effects of growth conditions, such as substrate temperature, growth ambient conditions, and V/III ratio, on the incorporation of Mg were also examined. In addition to bulk Mg-doped samples, the behavior of Mg in p-n homojunction as well as InGaN/GaN multiple quantum well (MQW) light emitting diode structures were also studied.
UR - http://www.scopus.com/inward/record.url?scp=0034246330&partnerID=8YFLogxK
M3 - 期刊論文
AN - SCOPUS:0034246330
SN - 1023-4462
VL - 7
SP - 227
EP - 231
JO - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
JF - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
IS - 3
ER -