InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

Nien Tze Yeh, Wei Sheng Liu, Shu Han Chen, Pe Chin Chiu, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

This letter presents the lasing properties of InAs/GaAs quantum dot lasers with InGaP cladding layers grown by solid-source molecular-beam epitaxy. These Al-free lasers exhibit a threshold current density of 138A/cm2, an internal loss of 1.35cm-1, and an internal quantum efficiency of 31% at room temperature. At a low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30A/cm 2 are measured.

原文???core.languages.en_GB???
頁(從 - 到)535-537
頁數3
期刊Applied Physics Letters
80
發行號4
DOIs
出版狀態已出版 - 28 1月 2002

指紋

深入研究「InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy」主題。共同形成了獨特的指紋。

引用此