InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy

N. T. Yeh, W. S. Liu, S. H. Chen, P. J. Chiu, J. I. Chyi

研究成果: 會議貢獻類型會議論文同行評審

摘要

This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm2, an internal loss of 1.35 cm-1 and an internal quantum efficiency of 31 % at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm2 are measured.

原文???core.languages.en_GB???
頁面87-90
頁數4
出版狀態已出版 - 2001
事件2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
持續時間: 14 5月 200118 5月 2001

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???event.eventtypes.event.conference???2001 International Conference on Indium Phosphide and Related Materials
國家/地區Japan
城市Nara
期間14/05/0118/05/01

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