摘要
This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm2, an internal loss of 1.35 cm-1 and an internal quantum efficiency of 31 % at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm2 are measured.
原文 | ???core.languages.en_GB??? |
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頁面 | 87-90 |
頁數 | 4 |
出版狀態 | 已出版 - 2001 |
事件 | 2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan 持續時間: 14 5月 2001 → 18 5月 2001 |
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???event.eventtypes.event.conference??? | 2001 International Conference on Indium Phosphide and Related Materials |
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國家/地區 | Japan |
城市 | Nara |
期間 | 14/05/01 → 18/05/01 |