InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation

Lung I. Chou, Li Yi Peng, Hsiang Chun Wang, Hsien Chin Chiu, How Ting Wang, Dong Long Chiang, Jen Inn Chyi

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this letter, a microwave annealing (MWA) method for Ohmic contact applied to InAlN/GaN high electron mobility transistor (HEMT) is the first time. The feature of MWA method is low operating temperature (450°C∼550°C). By using this technique, MWA-HEMT can achieve a low Ohmic contact resistance and smoother Ohmic contact surface than traditional rapid thermal annealing (RTA). The situation of Indium diffusion and device gate leakage current has been improved by this technique. Moreover, the reliability and RF performance of MWA-HEMT has a better result than RTA-HEMT.

原文???core.languages.en_GB???
主出版物標題2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-3
頁數3
ISBN(電子)9781509060696
DOIs
出版狀態已出版 - 26 12月 2017
事件39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 - Miami, United States
持續時間: 22 10月 201725 10月 2017

出版系列

名字2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
2017-January

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???event.eventtypes.event.conference???39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
國家/地區United States
城市Miami
期間22/10/1725/10/17

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