@inproceedings{8f4dc5fdf2ea40958af43fb3243fb1cc,
title = "InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with high current gain and low base sheet resistance",
abstract = "The proposed InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) exhibit a rather high current gain despite the use of a highly doped and thick InGaAsSb base layer, indicating that a high minority carrier lifetime exists in the InGaAsSb material. A high current gain over sheet resistance ratio, low cross-over current and a wide constant current gain range have been achieved, suggesting that the novel InAlAs/InGaAsSb/InGaAs DHBTs are grown with a high quality InGaAsSb base layer.",
author = "Chen, {Shu Han} and Chang, {Chao Min} and Chiang, {Pei Yi} and Wang, {Sheng Yu} and Chyi, {Jen Inn}",
year = "2009",
doi = "10.1109/ICIPRM.2009.5012505",
language = "???core.languages.en_GB???",
isbn = "9781424434336",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "319--322",
booktitle = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009",
note = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 ; Conference date: 10-05-2009 Through 14-05-2009",
}