In0.52 Al0.48 As/In0.53 Ga0.47 As Double-Heterojunction p-n-p Bipolar Transistors Grown by Molecular Beam Epitaxy

T. Won, C. K. Peng, J. Chyi, Hadis Morkoç

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

Chemical Compounds