In-plane gate transistors for photodetector applications

Yu An Liao, Wei Hsun Lin, Yi Kai Chao, Wen Hao Chang, Jen Inn Chyi, Shih Yen Lin

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

In-plane gate transistors (IPGTs) with 20-μrm m channel widths are fabricated on samples with n-(InGa)As sheet resistance embedded in undoped GaAs matrix. A trade-off between effective current modulation and high saturation drain current is obtained by optimizing the doping density of the sheet resistance. The mechanism responsible for the transistor behaviors of the devices is due to the channel electron depletion related to the population of mobile surface electrons under different gate biases. The photocurrent measurements demonstrate that the IPGT architecture is a feasible approach for the applications of photodetectors.

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文章編號6517908
頁(從 - 到)780-782
頁數3
期刊IEEE Electron Device Letters
34
發行號6
DOIs
出版狀態已出版 - 2013

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