Improving the optical and electrical properties of Fluorine-doped tin oxide films by various post-annealing treatments

Pin Jen Chen, Bo Huei Liao, Chien Cheng Kuo, Cheng Chung Lee

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Transparent conducting Fluorine-doped tin oxide (FTO) thin films were deposited on glass substrates by pulsed DC magnetron sputtering from cost saving metal targets. We observed lower resistivity and higher average transmittance in the visible range after the application of various post heating treatments. The electrical and optical properties of FTO films were investigated. When the annealing temperature is 400°C in air, the average transmittance is 79.79% with the lowest resistivity of 1.38×10-3 ω-cm, carrier density of 2.27×1020 cm-3 and mobility of 20 cm 2/V-s. When the annealing temperature is 400°C in a H2 5%+N2 95% atmosphere, the average transmittance is 79.75 % with the lowest resistivity of 1.26×10-3 ω-cm, carrier density of 2.17×1020 cm-3 and mobility of 22.8 cm 2/V-s. When the annealing temperature is 350 °C in vacuum, the average transmittance is 80.48% with the lowest resistivity of 1.23×10-3 ω-cm, carrier density of 4.40×10 20 cm-3 and mobility of 11.6 cm2/V-s.

原文???core.languages.en_GB???
主出版物標題Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI
DOIs
出版狀態已出版 - 2010
事件Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI - San Diego, CA, United States
持續時間: 1 8月 20103 8月 2010

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7786
ISSN(列印)0277-786X

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???event.eventtypes.event.conference???Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI
國家/地區United States
城市San Diego, CA
期間1/08/103/08/10

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