Improvement of heat resistance of hydrogen doped ZnO:Ga thin films

Cheng Chung Lee, Meng Chi Li, Wei Che Sun, Chien Cheng Kuo

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

This study shows the excellent heat resistance of hydrogen doped ZnO:Ga (GZO) films successfully fabricated by stacking a GZO protection film. The poor heat resistance of hydrogen doped GZO films caused by the departure of hydrogen from films after the RTA treatment exceeded 400C results in an increase in the resistivity. It means they are not suitable for thin film practical application processing with elevated temperatures. The electrical properties can be seen that the resistivity and carrier concentration of the GZOGZO:H films remains nearly stable up to the annealing temperature of 600C, and they maintain low resistivity below 5.6 10 -4 -cm.

原文???core.languages.en_GB???
頁(從 - 到)H94-H96
期刊Electrochemical and Solid-State Letters
15
發行號4
DOIs
出版狀態已出版 - 2012

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