Improved temperature characteristics of 1.55μm InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer

Jen Inn Chyi; Ming Hong Chen; Jen Wei Pan; Tien Tsorng Shih

doi:10.1049/el:19990335

Improved temperature characteristics of 1.55μm InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer

Jen Inn Chyi, Ming Hong Chen, Jen Wei Pan, Tien Tsorng Shih

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 μm InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77K is measured between 25 and 75°C for as-cleaved 1000μm-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%.

原文	???core.languages.en_GB???
頁（從 - 到）	1255-1257
頁數	3
期刊	Electronics Letters
卷	35
發行號	15
DOIs	https://doi.org/10.1049/el:19990335
出版狀態	已出版 - 22 7月 1999

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10.1049/el:19990335

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AU - Pan, Jen Wei

AU - Shih, Tien Tsorng

PY - 1999/7/22

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AB - A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 μm InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77K is measured between 25 and 75°C for as-cleaved 1000μm-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%.

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Improved temperature characteristics of 1.55μm InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer

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