We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and a low specific contact resistivity (pc) of 1.1×10 -6 ohm-cm 2 on n-type AlGaN/GaN heterostructures. The use of Cr interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact stack.
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||已出版 - 2009|
|事件||Gallium Nitride Materials and Devices IV - San Jose, CA, United States|
持續時間: 26 1月 2009 → 29 1月 2009