Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate

Hsien Chin Chiu, Li Yi Peng, Hsiang Chun Wang, Hsuan Ling Kao, Hou Yu Wang, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

The low-frequency noise (LFN) and reverse recovery charge characteristics of a six-inch InAlN/AlN/GaN Schottky barrier diode (SBD) on the Si-on-insulator (SOI) substrate were demonstrated and investigated for the first time. Raman spectroscopy indicated that using SOI wafers lowered epitaxial stress. According to the DC and LFN measurements at temperatures ranging from 300 to 450 K, the InAlN/GaN SBD on the SOI substrate showed improved forward and reverse currents and achieved a lower reverse recovery charge, compared with a conventional device.

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文章編號105009
期刊Semiconductor Science and Technology
32
發行號10
DOIs
出版狀態已出版 - 6 9月 2017

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