Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate

Hsien Chin Chiu; Li Yi Peng; Hsiang Chun Wang; Hsuan Ling Kao; Hou Yu Wang; Jen Inn Chyi

doi:10.1088/1361-6641/aa8261

Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate

Hsien Chin Chiu, Li Yi Peng, Hsiang Chun Wang, Hsuan Ling Kao, Hou Yu Wang, Jen Inn Chyi

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The low-frequency noise (LFN) and reverse recovery charge characteristics of a six-inch InAlN/AlN/GaN Schottky barrier diode (SBD) on the Si-on-insulator (SOI) substrate were demonstrated and investigated for the first time. Raman spectroscopy indicated that using SOI wafers lowered epitaxial stress. According to the DC and LFN measurements at temperatures ranging from 300 to 450 K, the InAlN/GaN SBD on the SOI substrate showed improved forward and reverse currents and achieved a lower reverse recovery charge, compared with a conventional device.

原文	???core.languages.en_GB???
文章編號	105009
期刊	Semiconductor Science and Technology
卷	32
發行號	10
DOIs	https://doi.org/10.1088/1361-6641/aa8261
出版狀態	已出版 - 6 9月 2017

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10.1088/1361-6641/aa8261

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title = "Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate",

abstract = "The low-frequency noise (LFN) and reverse recovery charge characteristics of a six-inch InAlN/AlN/GaN Schottky barrier diode (SBD) on the Si-on-insulator (SOI) substrate were demonstrated and investigated for the first time. Raman spectroscopy indicated that using SOI wafers lowered epitaxial stress. According to the DC and LFN measurements at temperatures ranging from 300 to 450 K, the InAlN/GaN SBD on the SOI substrate showed improved forward and reverse currents and achieved a lower reverse recovery charge, compared with a conventional device.",

keywords = "GaN/InAlN, low-frequency noise, Qrr, SBD, SOI",

author = "Chiu, {Hsien Chin} and Peng, {Li Yi} and Wang, {Hsiang Chun} and Kao, {Hsuan Ling} and Wang, {Hou Yu} and Chyi, {Jen Inn}",

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T1 - Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate

AU - Chiu, Hsien Chin

AU - Peng, Li Yi

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Wang, Hou Yu

AU - Chyi, Jen Inn

PY - 2017/9/6

Y1 - 2017/9/6

N2 - The low-frequency noise (LFN) and reverse recovery charge characteristics of a six-inch InAlN/AlN/GaN Schottky barrier diode (SBD) on the Si-on-insulator (SOI) substrate were demonstrated and investigated for the first time. Raman spectroscopy indicated that using SOI wafers lowered epitaxial stress. According to the DC and LFN measurements at temperatures ranging from 300 to 450 K, the InAlN/GaN SBD on the SOI substrate showed improved forward and reverse currents and achieved a lower reverse recovery charge, compared with a conventional device.

AB - The low-frequency noise (LFN) and reverse recovery charge characteristics of a six-inch InAlN/AlN/GaN Schottky barrier diode (SBD) on the Si-on-insulator (SOI) substrate were demonstrated and investigated for the first time. Raman spectroscopy indicated that using SOI wafers lowered epitaxial stress. According to the DC and LFN measurements at temperatures ranging from 300 to 450 K, the InAlN/GaN SBD on the SOI substrate showed improved forward and reverse currents and achieved a lower reverse recovery charge, compared with a conventional device.

KW - GaN/InAlN

KW - low-frequency noise

KW - Qrr

KW - SBD

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=85030155075&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aa8261

DO - 10.1088/1361-6641/aa8261

M3 - 期刊論文

AN - SCOPUS:85030155075

SN - 0268-1242

VL - 32

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

M1 - 105009

ER -

Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate

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