Improved process of fabricating AC-coupled silicon micro-strip sensors

Wen Chin Tsay; Jyh Wong Hong; A. Chen; Willis T. Lin; Ching Yi Hsu; Shu Mei Jan; Chien Li Kuo

doi:10.1016/0168-9002(94)91375-7

Improved process of fabricating AC-coupled silicon micro-strip sensors

Wen Chin Tsay
, Jyh Wong Hong
, A. Chen
, Willis T. Lin
, Ching Yi Hsu
, Shu Mei Jan
, Chien Li Kuo

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

12 引文斯高帕斯（Scopus）

摘要

A single-sided silicon sensor with capacitors coupling and polysilicon bias resistors has been designed and fabricated. A proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual SiO₂ layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formations, is to produce sensors with self-moisture-protection and free from the effect of pin holes. A comparison of presented data of IV, CV and RV measurements for the sensors with ONO and with SiO₂ dielectrics revealed that the ONO processes could lead to an excellent voltage-handling capability of the coupling capacitor. One sensor has been successfully tested twice in the beam at CERN in the past two years, yielding an S/N ratio of 20 and an efficiency above 95%, also demonstrating its excellent stability with respect to lengthy exposure to atmosphere.

原文	???core.languages.en_GB???
頁（從 - 到）	463-465
頁數	3
期刊	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
卷	351
發行號	2-3
DOIs	https://doi.org/10.1016/0168-9002(94)91375-7
出版狀態	已出版 - 1 12月 1994

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10.1016/0168-9002(94)91375-7

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@article{b705336043324a2880b3fba09b70da7a,

title = "Improved process of fabricating AC-coupled silicon micro-strip sensors",

abstract = "A single-sided silicon sensor with capacitors coupling and polysilicon bias resistors has been designed and fabricated. A proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual SiO2 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formations, is to produce sensors with self-moisture-protection and free from the effect of pin holes. A comparison of presented data of IV, CV and RV measurements for the sensors with ONO and with SiO2 dielectrics revealed that the ONO processes could lead to an excellent voltage-handling capability of the coupling capacitor. One sensor has been successfully tested twice in the beam at CERN in the past two years, yielding an S/N ratio of 20 and an efficiency above 95\%, also demonstrating its excellent stability with respect to lengthy exposure to atmosphere.",

author = "Tsay, \{Wen Chin\} and Hong, \{Jyh Wong\} and A. Chen and Lin, \{Willis T.\} and Hsu, \{Ching Yi\} and Jan, \{Shu Mei\} and Kuo, \{Chien Li\}",

note = "Funding Information: We would like to thank ERSO/ITRI and National Central University for their continous supports . This work was supported in part by the National Science Council of the Republic of China under Contracts NSC 82-0212-M-008-114 and NSC 81-0208-M-008-34.",

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doi = "10.1016/0168-9002(94)91375-7",

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TY - JOUR

T1 - Improved process of fabricating AC-coupled silicon micro-strip sensors

AU - Tsay, Wen Chin

AU - Hong, Jyh Wong

AU - Chen, A.

AU - Lin, Willis T.

AU - Hsu, Ching Yi

AU - Jan, Shu Mei

AU - Kuo, Chien Li

N1 - Funding Information: We would like to thank ERSO/ITRI and National Central University for their continous supports . This work was supported in part by the National Science Council of the Republic of China under Contracts NSC 82-0212-M-008-114 and NSC 81-0208-M-008-34.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - A single-sided silicon sensor with capacitors coupling and polysilicon bias resistors has been designed and fabricated. A proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual SiO2 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formations, is to produce sensors with self-moisture-protection and free from the effect of pin holes. A comparison of presented data of IV, CV and RV measurements for the sensors with ONO and with SiO2 dielectrics revealed that the ONO processes could lead to an excellent voltage-handling capability of the coupling capacitor. One sensor has been successfully tested twice in the beam at CERN in the past two years, yielding an S/N ratio of 20 and an efficiency above 95%, also demonstrating its excellent stability with respect to lengthy exposure to atmosphere.

AB - A single-sided silicon sensor with capacitors coupling and polysilicon bias resistors has been designed and fabricated. A proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual SiO2 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formations, is to produce sensors with self-moisture-protection and free from the effect of pin holes. A comparison of presented data of IV, CV and RV measurements for the sensors with ONO and with SiO2 dielectrics revealed that the ONO processes could lead to an excellent voltage-handling capability of the coupling capacitor. One sensor has been successfully tested twice in the beam at CERN in the past two years, yielding an S/N ratio of 20 and an efficiency above 95%, also demonstrating its excellent stability with respect to lengthy exposure to atmosphere.

UR - https://www.scopus.com/pages/publications/0009366073

U2 - 10.1016/0168-9002(94)91375-7

DO - 10.1016/0168-9002(94)91375-7

M3 - 期刊論文

AN - SCOPUS:0009366073

SN - 0168-9002

VL - 351

SP - 463

EP - 465

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 2-3

ER -

Improved process of fabricating AC-coupled silicon micro-strip sensors

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