Improved process of fabricating AC-coupled silicon micro-strip sensors

Wen Chin Tsay, Jyh Wong Hong, A. Chen, Willis T. Lin, Ching Yi Hsu, Shu Mei Jan, Chien Li Kuo

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)


A single-sided silicon sensor with capacitors coupling and polysilicon bias resistors has been designed and fabricated. A proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual SiO2 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formations, is to produce sensors with self-moisture-protection and free from the effect of pin holes. A comparison of presented data of IV, CV and RV measurements for the sensors with ONO and with SiO2 dielectrics revealed that the ONO processes could lead to an excellent voltage-handling capability of the coupling capacitor. One sensor has been successfully tested twice in the beam at CERN in the past two years, yielding an S/N ratio of 20 and an efficiency above 95%, also demonstrating its excellent stability with respect to lengthy exposure to atmosphere.

頁(從 - 到)463-465
期刊Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
出版狀態已出版 - 1 12月 1994


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