Improved power performance of InGaP/GaAs HBT with composite collector

Yue Ming Hsin, Chia Yen Chang, Chang Chung Fan, Che Ming Wang, H. T. Hsu

研究成果: 雜誌貢獻會議論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collector has been proposed and fabricated to obtain the suitable heterojuncton bipolar transistor (HBT) for power amplifiers in wireless communication. The composite collector combines both wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. In the composite collector, InGaP material provides high breakdown field and thus is able to be employed to reduce thickness of collector while keeping the same breakdown voltage. GaAs materials provides higher electron mobility and thus is used to reduce on-resistance and transit time. In this work, a DHBT with composite collector (DHBT_C) is presented to demonstrate its improved power performance.

原文???core.languages.en_GB???
頁(從 - 到)202-204
頁數3
期刊Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版狀態已出版 - 2004
事件2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
持續時間: 31 5月 20044 6月 2004

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