@inproceedings{f736c79aecf94b0eac75448e142d0f67,
title = "Improved power linearity of InGaP/GaAs HBTs by collector doping design",
abstract = "In this paper, it presents a non-uniform collector doping profile to reduce the nonlinear base-collector capacitance.",
keywords = "Analytical models, Capacitance, Capacitors, Circuit simulation, Doping profiles, Gallium arsenide, Heterojunction bipolar transistors, Linearity, Medical simulation, Voltage",
author = "Hsin, {Yue Ming} and Wang, {Ze Ming} and Hsu, {H. T.} and Tang, {W. B.} and Pan, {C. T.} and Ho, {Y. L.}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 61st Device Research Conference, DRC 2003 ; Conference date: 23-06-2003 Through 25-06-2003",
year = "2003",
doi = "10.1109/DRC.2003.1226886",
language = "???core.languages.en_GB???",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "89--90",
booktitle = "61st Device Research Conference, DRC 2003 - Conference Digest",
}