Improved performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers

Ping Li Wu; Yan Min Liao; Chi En Chen; Yu Jie Teng; Yu Ying Hung; Jin Wei Shi; Yi Shan Lee

Improved performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers

Ping Li Wu, Yan Min Liao, Chi En Chen, Yu Jie Teng, Yu Ying Hung, Jin Wei Shi, Yi Shan Lee

電機工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

摘要

The performance of InGaAs/InAlAs single photon avalanche diodes (SPAD) was improved with fabrication in triple mesa. Current SPADs achieve better dark count rate of 5 × 10⁴ Hz/μm² for single photon detection efficiency of 31% at RT.

原文	???core.languages.en_GB???
文章編號	STu1B.4
期刊	Optics InfoBase Conference Papers
出版狀態	已出版 - 2021
事件	Optical Sensors, Sensors 2021 - Part of OSA Optical Sensors and Sensing Congress 2021 - Virtual, Online, United States 持續時間: 19 7月 2021 → 23 7月 2021

引用此

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title = "Improved performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers",

abstract = "The performance of InGaAs/InAlAs single photon avalanche diodes (SPAD) was improved with fabrication in triple mesa. Current SPADs achieve better dark count rate of 5 × 104 Hz/μm2 for single photon detection efficiency of 31% at RT.",

author = "Wu, {Ping Li} and Liao, {Yan Min} and Chen, {Chi En} and Teng, {Yu Jie} and Hung, {Yu Ying} and Shi, {Jin Wei} and Lee, {Yi Shan}",

note = "Publisher Copyright: {\textcopyright} OSA 2021.; Optical Sensors, Sensors 2021 - Part of OSA Optical Sensors and Sensing Congress 2021 ; Conference date: 19-07-2021 Through 23-07-2021",

year = "2021",

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journal = "Optics InfoBase Conference Papers",

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TY - JOUR

T1 - Improved performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers

AU - Wu, Ping Li

AU - Liao, Yan Min

AU - Chen, Chi En

AU - Teng, Yu Jie

AU - Hung, Yu Ying

AU - Shi, Jin Wei

AU - Lee, Yi Shan

N1 - Publisher Copyright: © OSA 2021.

PY - 2021

Y1 - 2021

N2 - The performance of InGaAs/InAlAs single photon avalanche diodes (SPAD) was improved with fabrication in triple mesa. Current SPADs achieve better dark count rate of 5 × 104 Hz/μm2 for single photon detection efficiency of 31% at RT.

AB - The performance of InGaAs/InAlAs single photon avalanche diodes (SPAD) was improved with fabrication in triple mesa. Current SPADs achieve better dark count rate of 5 × 104 Hz/μm2 for single photon detection efficiency of 31% at RT.

UR - http://www.scopus.com/inward/record.url?scp=85120506366&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:85120506366

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - STu1B.4

T2 - Optical Sensors, Sensors 2021 - Part of OSA Optical Sensors and Sensing Congress 2021

Y2 - 19 July 2021 through 23 July 2021

ER -

Improved performance of InGaAs/InAlAs single photon avalanche diode with dual multiplication layers

摘要

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