Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Chia Hua Chan; Chia Hung Hou; Shao Ze Tseng; Tsing Jen Chen; Hung Ta Chien; Fu Li Hsiao; Chien Chieh Lee; Yen Ling Tsai; Chii Chang Chen

doi:10.1063/1.3173817

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Chia Hua Chan
, Chia Hung Hou
, Shao Ze Tseng
, Tsing Jen Chen
, Hung Ta Chien
, Fu Li Hsiao
, Chien Chieh Lee
, Yen Ling Tsai
, Chii Chang Chen

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

63 引文斯高帕斯（Scopus）

摘要

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO ₂ nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

原文	???core.languages.en_GB???
文章編號	011110
期刊	Applied Physics Letters
卷	95
發行號	1
DOIs	https://doi.org/10.1063/1.3173817
出版狀態	已出版 - 2009

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10.1063/1.3173817

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abstract = "This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO 2 nanospheres used as the mask. The output power of NPSS LEDs was 76\% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40\% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.",

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AU - Chan, Chia Hua

AU - Hou, Chia Hung

AU - Tseng, Shao Ze

AU - Chen, Tsing Jen

AU - Chien, Hung Ta

AU - Hsiao, Fu Li

AU - Lee, Chien Chieh

AU - Tsai, Yen Ling

AU - Chen, Chii Chang

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N2 - This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO 2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

AB - This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO 2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

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Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

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