Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Chia Hua Chan; Chia Hung Hou; Shao Ze Tseng; Tsing Jen Chen; Hung Ta Chien; Fu Li Hsiao; Chien Chieh Lee; Yen Ling Tsai; Chii Chang Chen

doi:10.1063/1.3173817

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Chia Hua Chan, Chia Hung Hou, Shao Ze Tseng, Tsing Jen Chen, Hung Ta Chien, Fu Li Hsiao, Chien Chieh Lee, Yen Ling Tsai, Chii Chang Chen

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

63 引文斯高帕斯（Scopus）

摘要

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO ₂ nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

原文	???core.languages.en_GB???
文章編號	011110
期刊	Applied Physics Letters
卷	95
發行號	1
DOIs	https://doi.org/10.1063/1.3173817
出版狀態	已出版 - 2009

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AU - Hou, Chia Hung

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AU - Chien, Hung Ta

AU - Hsiao, Fu Li

AU - Lee, Chien Chieh

AU - Tsai, Yen Ling

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Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

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