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Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure
Wei Sheng Liu
, Ting Kai Yang
, Wei Jen Hsueh
,
Jen Inn Chyi
, Tien Yuan Huang
, Ming En Hsu
電機工程學系
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
8
引文 斯高帕斯(Scopus)
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Keyphrases
Optical Properties
100%
InGaAs
100%
GaAsSb
100%
Well Structure
100%
Double Well
100%
Multilayer Quantum Dot
100%
InGaAs Quantum Dots
33%
Crystal Quality
22%
Photoluminescence Intensity
11%
Gallium Arsenide
11%
Photoluminescence
11%
Microstructure
11%
Surfactant
11%
Emission Spectrum
11%
High-resolution Transmission Electron Microscopy (HRTEM)
11%
Photoluminescence Measurements
11%
Two-peak
11%
Radiative Recombination
11%
Hole Confinement
11%
Carrier Confinement
11%
Overflow
11%
High Activation Energy
11%
Optical Properties of Quantum Dots
11%
Carrier Recombination
11%
Quality Properties
11%
Additional Volume
11%
Nonradiative Recombination Center
11%
Advanced Performance
11%
Thermal Escape
11%
Material Science
Quantum Dot
100%
Optical Property
100%
Indium Gallium Arsenide
100%
Photoluminescence
30%
Quantum Well
30%
Surface Active Agent
10%
Activation Energy
10%
Gallium Arsenide
10%
High-Resolution Transmission Electron Microscopy
10%
Engineering
Quantum Dot
100%
Indium Gallium Arsenide
100%
Quantum Well
30%
Crystal Quality
20%
High Resolution
10%
Gallium Arsenide
10%
Surfactant
10%
Activation Energy
10%
Emission Wavelength
10%
Optoelectronic Device
10%
Radiative Recombination
10%
Recombination Centre
10%
Chemical Engineering
Surfactant
100%