Improved InGaP/GaAs HBTs AC performance and linearity with collector design

Che Ming Wang, Hung Tsao Hsu, Hsiu Chuan Shu, Yu An Liu, Yue Ming Hsin

研究成果: 會議貢獻類型會議論文同行評審

摘要

The additional thin high-doping layer within the collector on InGaP/GaAs HBT has been designed and fabricated to improve threshold current of Kirk effect, cutoff frequency, and power distortion while keeping high breakdown voltage. The proposal structure effectively relieves Kirk effect and results in higher current drive and cut-off frequency. From the extracted CBC with VCB, HBT with non-uniform doping collectors demonstrate less base-collector capacitance variation than that in baseline HBT due to the depletion region limited by a thin high-doping layer. The experimental results on third-order intermodulation demonstrate the significant improvement on OIP3 by as targe as 6 dB. This proposed InGaP/GaAs HBT with non-uniform collector doping is well suitable to replace current InGaP/GaAs HBT for power amplifier applications due to its significantly improved linearity and current/frequency capability with negligible impact on dc characteristics and fabrication.

原文???core.languages.en_GB???
頁面391-394
頁數4
出版狀態已出版 - 2004
事件Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
持續時間: 6 6月 20048 6月 2004

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
國家/地區United States
城市Fort Worth, TX
期間6/06/048/06/04

指紋

深入研究「Improved InGaP/GaAs HBTs AC performance and linearity with collector design」主題。共同形成了獨特的指紋。

引用此