摘要
The pre-intermixing treatments of Ge quantum dots (QDs) were demonstrated to be effective in improving the size uniformity and preventing the formation of cone-shaped defects (CSD) in the Ge dots multilayers. The rapid decrease in density of Ge dots with the number of layers is also alleviated. The strain relaxation of Si/Ge multifold layers is characterized by rocking curves. The pre-intermixed Ge dots have a stronger photoluminescence intensity due to a higher Ge dots density and a lower cone-shaped defect density. The results indicate that pre-intermixing treatment of Ge quantum dots is a promising technique for the fabrication of emitters and detectors in Si-based optoelectronic devices.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 152-155 |
頁數 | 4 |
期刊 | Applied Surface Science |
卷 | 224 |
發行號 | 1-4 |
DOIs | |
出版狀態 | 已出版 - 15 3月 2004 |