Improved electroluminescence of InAs quantum dots with strain reducing layer

Nien Tze Yeh, Tzer En Nee, Jen Inn Chyi, Chih Ta Chia, Tzu Min Hsu, Chien Chi Huang

研究成果: 雜誌貢獻會議論文同行評審

8 引文 斯高帕斯(Scopus)


The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL. For the same sample, the full-width at half-maximum of the ground state emission peak is as narrow as 19 meV at low injection current, and less than 40 meV even at saturation condition. It is also found that the slope efficiency of the diode is higher than that of the other samples in the linear region and its light output saturation level is higher because of the higher density of QDs.

頁(從 - 到)1044-1048
期刊Journal of Crystal Growth
出版狀態已出版 - 7月 2001
事件11th International Conference on Molecular Beam Epitaxy - Bijing, China
持續時間: 11 9月 200015 9月 2000


深入研究「Improved electroluminescence of InAs quantum dots with strain reducing layer」主題。共同形成了獨特的指紋。