Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-bandwidth product of 428 GHz
深入研究「Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-bandwidth product of 428 GHz」主題。共同形成了獨特的指紋。