III-Nitride-Based Cyan Light-Emitting Diodes with GHz Bandwidth for High-Speed Visible Light Communication

Jin Wei Shi, Kai Lun Chi, Jhih Min Wun, John E. Bowers, Ya Hsuan Shih, Jinn Kong Sheu

研究成果: 雜誌貢獻期刊論文同行評審

46 引文 斯高帕斯(Scopus)

摘要

A large reduction (from 17 to 5 nm) is made in the thickness of the barrier layers in the multiple-quantum-well region of III-nitride-based cyan light-emitting diodes (LEDs) grown on patterned sapphire substrates. This is shown to lead to a simultaneous improvement in the modulation speed, differential quantum efficiency, and maximum output power of the LEDs under both room temperature and 110 °C operation. With our novel device structure, we achieve a moderate output power (1.7 mW) with a record high 3-dB electrical-to-optical (E-O) bandwidth (1 GHz). The over twofold enhancement in the E-O bandwidth (∼ 1 versus ∼ 0.5 GHz) compared with that previously reported visible LEDs can be attributed to the more uniform distribution of injected carriers within the MQW region and the aggressive downscaling of the thickness of the total active layer, which leads to a shortening of the spontaneous recombination time.

原文???core.languages.en_GB???
文章編號7479469
頁(從 - 到)894-897
頁數4
期刊IEEE Electron Device Letters
37
發行號7
DOIs
出版狀態已出版 - 7月 2016

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