I-V Characteristics of E-mode GaN-based transistors under gate floating

Engineering & Materials Science

• High electron mobility transistors 96%
• Gates (transistor) 79%
• Transistors 71%
• Drain current 70%
• Field effect transistors 59%
• Capacitance 47%
• Equivalent circuits 26%
• Electrodes 21%

Physics & Astronomy

• floating 82%
• transistors 66%
• high electron mobility transistors 23%
• charging 14%
• capacitance 12%
• field effect transistors 11%
• equivalent circuits 7%
• injection 5%
• conduction 5%
• electrodes 4%
• simulation 2%

Chemical Compounds

• Electron Mobility 100%
• Drain Current 86%
• Simulation 17%
• Behavior as Electrode 14%
• Time 10%