@article{c06a8076fc8b4cdca388b70cbb2cc9d3,
title = "Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models",
abstract = "Human immunodeficiency virus (HIV) Reverse Transcriptase (RT)-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) and binding-site models were used to find out the dissociation constants of the HIV RT-inhibitor complex and the number of the binding sites on RT for the inhibitor, Efavirenz. One binding site on the RT for the inhibitor is predicted and the dissociation constant extracted from the binding-site model is 0.212 nM. The AlGaN/GaN HEMTs and the binding-site-models are demonstrated to be good tools to assist drug developments by elucidating the dissociation constants and the number of binding sites, which can largely reduce the cost and time for drug developments.",
author = "Kang, {Yen Wen} and Lee, {Geng Yen} and Chyi, {Jen Inn} and Hsu, {Chen Pin} and Hsu, {You Ren} and Hsu, {Chia Hsien} and Huang, {Yu Fen} and Sun, {Yuh Chang} and Chen, {Chih Chen} and {Chun Hung}, Sheng and Fan Ren and {Andrew Yeh}, J. and Wang, {Yu Lin}",
note = "Funding Information: This work was partially supported by National Science Council Grant Nos. (NSC 99-2218-E-007-019-MY2 and NSC 101-2221-E-007-102-MY3) and by the research Grant No. (100N2049E1) at National Tsing Hua University. We thank Dr. Jen-Inn Chyi for providing us the AlGaN/GaN epi wafers and for consulting as well.",
year = "2013",
month = apr,
day = "29",
doi = "10.1063/1.4803916",
language = "???core.languages.en_GB???",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "17",
}