Highly Reliable, Scalable, and High-Yield HfZrOxFRAM by Barrier Layer Engineering and Post-Metal Annealing

Yu De Lin, Po Chun Yeh, Jheng Yang Dai, Jian Wei Su, Hsin Hui Huang, Chen Yi Cho, Ying Tsan Tang, Tuo Hung Hou, Shyh Shyuan Sheu, Wei Chung Lo, Shih Chieh Chang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

5 引文 斯高帕斯(Scopus)

摘要

A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.

原文???core.languages.en_GB???
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面3211-3214
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態已出版 - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

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???event.eventtypes.event.conference???2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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