@inproceedings{013442c4bff646e2941e25be0143e283,
title = "Highly Reliable, Scalable, and High-Yield HfZrOxFRAM by Barrier Layer Engineering and Post-Metal Annealing",
abstract = "A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.",
author = "Lin, {Yu De} and Yeh, {Po Chun} and Dai, {Jheng Yang} and Su, {Jian Wei} and Huang, {Hsin Hui} and Cho, {Chen Yi} and Tang, {Ying Tsan} and Hou, {Tuo Hung} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Chang, {Shih Chieh}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",
year = "2022",
doi = "10.1109/IEDM45625.2022.10019561",
language = "???core.languages.en_GB???",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3211--3214",
booktitle = "2022 International Electron Devices Meeting, IEDM 2022",
}