High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor

S. Krishna Sai, Yue Ming Hsin

研究成果: 雜誌貢獻通訊期刊論文同行評審

摘要

This study investigated a normally-off p-GaN/AlGaN/GaN high electron mobility transistor with the extended p-GaN. The optimized recess depth in the AlGaN barrier under the extended region of p-GaN provides improved device characteristics. The influences of recess depth in the AlGaN barrier and the extended length of the p-GaN extension on the threshold voltage (VTH), the maximum drain current (ID,MAX), and breakdown voltage were simulated and studied. The proposed transistor with a 1-μm p-GaN extension and 2-nm recess depth in AlGaN barrier shows improvement on VTH and ID,MAX without degrading the breakdown voltage compared with the device without p-GaN extension. Graphic abstract: The optimized recess depth (TR) in the AlGaN barrier under the extended region of p-GaN provides improved device characteristics. [Figure not available: see fulltext.]

原文???core.languages.en_GB???
頁(從 - 到)517-522
頁數6
期刊MRS Communications
11
發行號4
DOIs
出版狀態已出版 - 8月 2021

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