@article{3325f2b0401d4f5c8a34872e4f764d4c,
title = "High voltage GaN Schottky rectifiers",
abstract = "Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (VRB) up to 550 and >2000 V, respectively, have been fabricated. The on-state resistance, RON, was 6 mΩ·cm2 and 0.8 Ω cm2, respectively, producing figure-of-merit values for (VRB)2/RON in the range 5-48 MW·cm-2. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5 V for the 550 V diodes and ≥15 for the 2 kV diodes. Reverse recovery times were <0.2 μs for devices switched from a forward current density of approximately 500 A·cm-2 to a reverse bias of 100 V.",
author = "Dang, {Gerard T.} and Zhang, {Anping P.} and Fan Ren and Cao, {Xianan A.} and Pearton, {Stephen J.} and Hyun Cho and Jung Han and Chyi, {Jenn Inn} and Lee, {C. M.} and Chuo, {C. C.} and {George Chu}, {S. N.} and Wilson, {Robert G.}",
note = "Funding Information: Manuscript received August 20, 1999; revised November 2, 1999. The work at the University of Florida was supported in part the National Science Foundation under Grant DMR-9732865 (L. Hess) and by a DARPA/EPRI Grant (D. Radack/J. Melcher), MDA 972-98-1-006 monitored by ONR (J. C. Zolper). The work at National Central University was sponsored by the National Science Council of R.O.C. under Contract NSC-88-2215-E-008-012. The work of R. G. Wilson was supported in part by a grant from ARO (J. M. Zavada). The review of this paper was arranged by Editor A. S. Brown.",
year = "2000",
doi = "10.1109/16.830981",
language = "???core.languages.en_GB???",
volume = "47",
pages = "692--696",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "4",
}