High voltage GaN Schottky rectifiers

Gerard T. Dang, Anping P. Zhang, Fan Ren, Xianan A. Cao, Stephen J. Pearton, Hyun Cho, Jung Han, Jenn Inn Chyi, C. M. Lee, C. C. Chuo, S. N. George Chu, Robert G. Wilson

研究成果: 雜誌貢獻期刊論文同行評審

85 引文 斯高帕斯(Scopus)

摘要

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (VRB) up to 550 and >2000 V, respectively, have been fabricated. The on-state resistance, RON, was 6 mΩ·cm2 and 0.8 Ω cm2, respectively, producing figure-of-merit values for (VRB)2/RON in the range 5-48 MW·cm-2. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5 V for the 550 V diodes and ≥15 for the 2 kV diodes. Reverse recovery times were <0.2 μs for devices switched from a forward current density of approximately 500 A·cm-2 to a reverse bias of 100 V.

原文???core.languages.en_GB???
頁(從 - 到)692-696
頁數5
期刊IEEE Transactions on Electron Devices
47
發行號4
DOIs
出版狀態已出版 - 2000

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