摘要
For thin-GaN LED, Al layer is often incorporated with NiO-Au to form a highly reflective NiO-Au/Al p-GaN contact. Both electrical and optical characteristics of NiO-Au/Al contact exhibited poor thermal stability. X-ray photoelectron spectroscopy (XPS) results showed that the poor thermal stability attributed to the diffusion of Al atoms into GaN epi layer. To prevent Al diffusion, a Ni barrier layer was placed between Al and NiO-Au layer. The specific contact resistance of the NiO-Au/Ni/Al was maintained on the order of 10-2 Ω-cm2, up to 600°C. XPS results confirmed the function of the Ni barrier layer. Low Al level was detected in GaN epi layer.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | G265-G267 |
期刊 | Electrochemical and Solid-State Letters |
卷 | 8 |
發行號 | 10 |
DOIs | |
出版狀態 | 已出版 - 2005 |