High-thermal-stability and low-resistance p-GaN contact for thin-GaN light emitting diodes structure

C. L. Lin, S. J. Wang, C. Y. Liu

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

For thin-GaN LED, Al layer is often incorporated with NiO-Au to form a highly reflective NiO-Au/Al p-GaN contact. Both electrical and optical characteristics of NiO-Au/Al contact exhibited poor thermal stability. X-ray photoelectron spectroscopy (XPS) results showed that the poor thermal stability attributed to the diffusion of Al atoms into GaN epi layer. To prevent Al diffusion, a Ni barrier layer was placed between Al and NiO-Au layer. The specific contact resistance of the NiO-Au/Ni/Al was maintained on the order of 10-2 Ω-cm2, up to 600°C. XPS results confirmed the function of the Ni barrier layer. Low Al level was detected in GaN epi layer.

原文???core.languages.en_GB???
頁(從 - 到)G265-G267
期刊Electrochemical and Solid-State Letters
8
發行號10
DOIs
出版狀態已出版 - 2005

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