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High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures
J. W. Shi
, J. K. Sheu, C. H. Chen, G. R. Lin, W. C. Lai
電機工程學系
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
71
引文 斯高帕斯(Scopus)
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深入研究「High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures」主題。共同形成了獨特的指紋。
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Keyphrases
Active Layer
100%
GaN-based
100%
Green Light-emitting Diodes
100%
Active Current
100%
Multiple Quantum Wells
66%
3-dB Bandwidth
33%
N-GaN
33%
Undoped
33%
Communications Applications
33%
Plastic Optical Fiber Communication
33%
Plastic Optical Fiber
33%
Recombination Lifetime
33%
Coupled Power
33%
Numerical Aperture
33%
Engineering
Light-Emitting Diode
100%
Active Layer
100%
Quantum Well
100%
Plastic Optical Fibers
100%
Db Bandwidth
50%
Numerical Aperture
50%
Fiber-Optic Communication
50%
Recombination Lifetime
50%
Spontaneous Recombination
50%
Physics
Light Emitting Diode
100%
Multiple Quantum Well
100%
Plastic Optical Fiber
100%
Numerical Aperture
50%
Fiber-Optic Communication
50%
Material Science
Light-Emitting Diode
100%
Quantum Well
100%
Plastic Optical Fiber
100%
Fiber-Optic Communication
50%