High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

J. W. Shi; J. K. Sheu; C. H. Chen; G. R. Lin; W. C. Lai

doi:10.1109/LED.2007.914070

High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, W. C. Lai

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

73 引文斯高帕斯（Scopus）

摘要

We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped In_x Ga_1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

原文	???core.languages.en_GB???
頁（從 - 到）	158-160
頁數	3
期刊	IEEE Electron Device Letters
卷	29
發行號	2
DOIs	https://doi.org/10.1109/LED.2007.914070
出版狀態	已出版 - 2月 2008

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10.1109/LED.2007.914070

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title = "High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures",

abstract = "We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).",

keywords = "GaN, LED, Optical fiber",

author = "Shi, {J. W.} and Sheu, {J. K.} and Chen, {C. H.} and Lin, {G. R.} and Lai, {W. C.}",

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T1 - High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

AU - Shi, J. W.

AU - Sheu, J. K.

AU - Chen, C. H.

AU - Lin, G. R.

AU - Lai, W. C.

PY - 2008/2

Y1 - 2008/2

N2 - We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

AB - We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

KW - GaN

KW - LED

KW - Optical fiber

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M3 - 期刊論文

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ER -

High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

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