Ultra-high speed and high saturation power performances of low-temperature-grown GaAs based MSM TW photodetectors was demonstrated in the telecommunication wavelength regime (∼1300 nm). A femtosecond Cr4+: forsterite laser operating at 1230 nm was employed, for minimization of telecommunication wavelength of 1300-1500 nm. 160 GHz electrical bandwidth with 3.55 V peak output voltage was obtained under 10 V bias and 28 pJ/pulse optical excitation energy.
|出版狀態||已出版 - 2002|
|事件||Conference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States|
持續時間: 19 5月 2002 → 24 5月 2002
|???event.eventtypes.event.conference???||Conference on Lasers and Electro-Optics (CLEO 2002)|
|城市||Long Beach, CA|
|期間||19/05/02 → 24/05/02|