摘要
In this letter, we demonstrated ultrahigh bandwidth and high output power performances of low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal traveling wave photodetectors (MSM TWPDs) in the long wavelength regime (∼1300 nm). Ultrahigh bandwidth (1.3-ps pulsewidth with 234 GHz transformed 3-dB electrical bandwidth) was achieved with long-absorption-length (70-μm) devices due to the improved microwave property in the MSM TWPDs and their high velocity-mismatch bandwidth. Under high optical power illumination, these 70-μm-long MSM TWPD devices also exhibited superior output power-bandwidth-product performance due to their large absorption volumes. To the best of our knowledge, the demonstrated peak-output-voltage-bandwidth product (3.55 V, 160 GHz, 568 GHz-V) is the highest among the reported photodetectors for long optical communication wavelength (1.2 μm-1.6 μm) applications.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 363-365 |
頁數 | 3 |
期刊 | IEEE Photonics Technology Letters |
卷 | 14 |
發行號 | 3 |
DOIs | |
出版狀態 | 已出版 - 3月 2002 |