High-speed and high-power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3-μm wavelength regime

Jin Wei Shi, Yen Hung Chen, Kian Giap Gan, Yi Jen Chiu, Chi Kuang Sun, John E. Bowers

研究成果: 雜誌貢獻期刊論文同行評審

29 引文 斯高帕斯(Scopus)

摘要

In this letter, we demonstrated ultrahigh bandwidth and high output power performances of low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal traveling wave photodetectors (MSM TWPDs) in the long wavelength regime (∼1300 nm). Ultrahigh bandwidth (1.3-ps pulsewidth with 234 GHz transformed 3-dB electrical bandwidth) was achieved with long-absorption-length (70-μm) devices due to the improved microwave property in the MSM TWPDs and their high velocity-mismatch bandwidth. Under high optical power illumination, these 70-μm-long MSM TWPD devices also exhibited superior output power-bandwidth-product performance due to their large absorption volumes. To the best of our knowledge, the demonstrated peak-output-voltage-bandwidth product (3.55 V, 160 GHz, 568 GHz-V) is the highest among the reported photodetectors for long optical communication wavelength (1.2 μm-1.6 μm) applications.

原文???core.languages.en_GB???
頁(從 - 到)363-365
頁數3
期刊IEEE Photonics Technology Letters
14
發行號3
DOIs
出版狀態已出版 - 3月 2002

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