@inproceedings{a49b689b26a946e3a0944510c1986cb1,
title = "High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations",
abstract = "By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 pm wavelength operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7μat-2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.",
author = "Chao, {Rui Lin} and Wun, {Jhih Min} and Wang, {Yu Wen} and Chen, {Yi Han} and Bowers, {J. E.} and Shi, {Jin Wei}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th IEEE Photonics Conference, IPC 2016 ; Conference date: 02-10-2016 Through 06-10-2016",
year = "2017",
month = jan,
day = "23",
doi = "10.1109/IPCon.2016.7831186",
language = "???core.languages.en_GB???",
series = "2016 IEEE Photonics Conference, IPC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "472--473",
booktitle = "2016 IEEE Photonics Conference, IPC 2016",
}