High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

Guan Ting Chen; Chang Chi Pan; Chi Shin Fang; Tzu Chien Huang; Jen Inn Chyi; Mae Nan Chang; Sheng Bang Huang; Jung Tsung Hsu

doi:10.1063/1.1805199

High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

Guan Ting Chen
, Chang Chi Pan
, Chi Shin Fang
, Tzu Chien Huang
, Jen Inn Chyi
, Mae Nan Chang
, Sheng Bang Huang
, Jung Tsung Hsu

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

15 引文斯高帕斯（Scopus）

摘要

The investigation of the thermal stability, optical reflectivity and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN was discussed. It was shown that incontrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity and reflectivity after long-term annealing at 150°C in nitrogen ambient. It was suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment. The Pd/Ni/Al/Ti/Au contact was subjected to a long-term thermal aging test.

原文	???core.languages.en_GB???
頁（從 - 到）	2797-2799
頁數	3
期刊	Applied Physics Letters
卷	85
發行號	14
DOIs	https://doi.org/10.1063/1.1805199
出版狀態	已出版 - 4 10月 2004

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10.1063/1.1805199

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title = "High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes",

abstract = "The investigation of the thermal stability, optical reflectivity and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN was discussed. It was shown that incontrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity and reflectivity after long-term annealing at 150°C in nitrogen ambient. It was suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment. The Pd/Ni/Al/Ti/Au contact was subjected to a long-term thermal aging test.",

author = "Chen, \{Guan Ting\} and Pan, \{Chang Chi\} and Fang, \{Chi Shin\} and Huang, \{Tzu Chien\} and Chyi, \{Jen Inn\} and Chang, \{Mae Nan\} and Huang, \{Sheng Bang\} and Hsu, \{Jung Tsung\}",

note = "Funding Information: This project is partially supported by the National Science Council of R.O.C. under Contract No. NSC 91-2215-E-008-014, the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities, and the Opto-Electronics and System Laboratories of Industrial Technology Research Institute.",

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doi = "10.1063/1.1805199",

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T1 - High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

AU - Chen, Guan Ting

AU - Pan, Chang Chi

AU - Fang, Chi Shin

AU - Huang, Tzu Chien

AU - Chyi, Jen Inn

AU - Chang, Mae Nan

AU - Huang, Sheng Bang

AU - Hsu, Jung Tsung

N1 - Funding Information: This project is partially supported by the National Science Council of R.O.C. under Contract No. NSC 91-2215-E-008-014, the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities, and the Opto-Electronics and System Laboratories of Industrial Technology Research Institute.

PY - 2004/10/4

Y1 - 2004/10/4

N2 - The investigation of the thermal stability, optical reflectivity and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN was discussed. It was shown that incontrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity and reflectivity after long-term annealing at 150°C in nitrogen ambient. It was suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment. The Pd/Ni/Al/Ti/Au contact was subjected to a long-term thermal aging test.

AB - The investigation of the thermal stability, optical reflectivity and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN was discussed. It was shown that incontrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity and reflectivity after long-term annealing at 150°C in nitrogen ambient. It was suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment. The Pd/Ni/Al/Ti/Au contact was subjected to a long-term thermal aging test.

UR - https://www.scopus.com/pages/publications/8344235087

U2 - 10.1063/1.1805199

DO - 10.1063/1.1805199

M3 - 期刊論文

AN - SCOPUS:8344235087

SN - 0003-6951

VL - 85

SP - 2797

EP - 2799

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

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