HIGH RATE MAGNETRON ION ETCHING FOR SILICON DEVICES.

I. Lin; D. C. Hinson; W. H. Class; R. Stander; Michael Hill; W. Vanden Bossche

HIGH RATE MAGNETRON ION ETCHING FOR SILICON DEVICES.

I. Lin, D. C. Hinson, W. H. Class, R. Stander, Michael Hill, W. Vanden Bossche

物理學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

Magnetron plasma etchers with axial magnetic fields and hexagonal and oval cross sections were constructed. Electron magnetic confinement sustains stable low pressure collisionless plasmas and generates high flux, low energy (50 - 300 eV) ion bombardment for high rate (approximately 0. 5 mu /min for SiO2) and low radiation damage etching. Etch uniformity and normal ion bombardment can be easily controlled by plasma optics. The magnetic field adds another degree of freedom for controlling plasma parameters and in turn the etching process. The basic principle of the magnetron etching is introduced.

原文	???core.languages.en_GB???
出版狀態	已出版 - 8月 1983
事件	Secondes Journ d'Etud sur la Gravure Seche en Microelectron - Grenoble, Fr 持續時間: 22 11月 1983 → 24 11月 1983

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???event.eventtypes.event.conference???	Secondes Journ d'Etud sur la Gravure Seche en Microelectron
城市	Grenoble, Fr
期間	22/11/83 → 24/11/83

引用此

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abstract = "Magnetron plasma etchers with axial magnetic fields and hexagonal and oval cross sections were constructed. Electron magnetic confinement sustains stable low pressure collisionless plasmas and generates high flux, low energy (50 - 300 eV) ion bombardment for high rate (approximately 0. 5 mu /min for SiO2) and low radiation damage etching. Etch uniformity and normal ion bombardment can be easily controlled by plasma optics. The magnetic field adds another degree of freedom for controlling plasma parameters and in turn the etching process. The basic principle of the magnetron etching is introduced.",

author = "I. Lin and Hinson, {D. C.} and Class, {W. H.} and R. Stander and Michael Hill and {Vanden Bossche}, W.",

year = "1983",

month = aug,

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note = "Secondes Journ d'Etud sur la Gravure Seche en Microelectron ; Conference date: 22-11-1983 Through 24-11-1983",

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TY - CONF

T1 - HIGH RATE MAGNETRON ION ETCHING FOR SILICON DEVICES.

AU - Lin, I.

AU - Hinson, D. C.

AU - Class, W. H.

AU - Stander, R.

AU - Hill, Michael

AU - Vanden Bossche, W.

PY - 1983/8

Y1 - 1983/8

N2 - Magnetron plasma etchers with axial magnetic fields and hexagonal and oval cross sections were constructed. Electron magnetic confinement sustains stable low pressure collisionless plasmas and generates high flux, low energy (50 - 300 eV) ion bombardment for high rate (approximately 0. 5 mu /min for SiO2) and low radiation damage etching. Etch uniformity and normal ion bombardment can be easily controlled by plasma optics. The magnetic field adds another degree of freedom for controlling plasma parameters and in turn the etching process. The basic principle of the magnetron etching is introduced.

AB - Magnetron plasma etchers with axial magnetic fields and hexagonal and oval cross sections were constructed. Electron magnetic confinement sustains stable low pressure collisionless plasmas and generates high flux, low energy (50 - 300 eV) ion bombardment for high rate (approximately 0. 5 mu /min for SiO2) and low radiation damage etching. Etch uniformity and normal ion bombardment can be easily controlled by plasma optics. The magnetic field adds another degree of freedom for controlling plasma parameters and in turn the etching process. The basic principle of the magnetron etching is introduced.

UR - http://www.scopus.com/inward/record.url?scp=0020795058&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0020795058

T2 - Secondes Journ d'Etud sur la Gravure Seche en Microelectron

Y2 - 22 November 1983 through 24 November 1983

ER -

HIGH RATE MAGNETRON ION ETCHING FOR SILICON DEVICES.

摘要

???event.eventtypes.event.conference???

指紋

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