High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

Van Truong Dai; Sheng Di Lin; Shih Wei Lin; Yi Shan Lee; Liang Chen Li; Chien Ping Lee

doi:10.1364/OE.22.003811

High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

Van Truong Dai, Sheng Di Lin, Shih Wei Lin, Yi Shan Lee, Liang Chen Li, Chien Ping Lee

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, twodimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.

原文	???core.languages.en_GB???
頁（從 - 到）	3811-3817
頁數	7
期刊	Optics Express
卷	22
發行號	4
DOIs	https://doi.org/10.1364/OE.22.003811
出版狀態	已出版 - 24 2月 2014

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10.1364/OE.22.003811

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AU - Lee, Chien Ping

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AB - A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, twodimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.

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High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

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