@inproceedings{e0da3b8e0657412097b2a9178caf9994,
title = "High quality InAs quantum dots with an In(Ga,Al)AsSb strain-reducing layer for long wavelength photonic devices",
abstract = "The effects of InGaAsSb and InAlAsSb strain-reducing layers on the optical properties of InAs/GaAs QDs are investigated. With these Sb-containing overgrown layers, InAs QDs exhibit much enhanced photoluminescence efficiency and thermal stability in the wavelength of 1.3μm and above, which is essential for long wavelength photonic devices.",
author = "Chyi, {Jen Inn} and Liu, {Wei Sheng} and Chiu, {Pei Chin} and Shiau, {Meng Jie} and Kuo, {David M.T.} and Chen, {Wen Yen} and Chang, {Hsing Szu} and Hsu, {Tzu Min}",
year = "2007",
doi = "10.1149/1.2731168",
language = "???core.languages.en_GB???",
isbn = "9781566775519",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "35--40",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}