High quality InAs quantum dots with an In(Ga,Al)AsSb strain-reducing layer for long wavelength photonic devices

Jen Inn Chyi, Wei Sheng Liu, Pei Chin Chiu, Meng Jie Shiau, David M.T. Kuo, Wen Yen Chen, Hsing Szu Chang, Tzu Min Hsu

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

The effects of InGaAsSb and InAlAsSb strain-reducing layers on the optical properties of InAs/GaAs QDs are investigated. With these Sb-containing overgrown layers, InAs QDs exhibit much enhanced photoluminescence efficiency and thermal stability in the wavelength of 1.3μm and above, which is essential for long wavelength photonic devices.

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主出版物標題ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
發行者Electrochemical Society Inc.
頁面35-40
頁數6
版本2
ISBN(電子)9781566775519
ISBN(列印)9781566775519
DOIs
出版狀態已出版 - 2007
事件46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
持續時間: 6 5月 200710 5月 2007

出版系列

名字ECS Transactions
號碼2
6
ISSN(列印)1938-5862
ISSN(電子)1938-6737

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???event.eventtypes.event.conference???46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
國家/地區United States
城市Chicago, IL
期間6/05/0710/05/07

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