Strain-compensated 1.3 μm AlGaInAs/InP multiquantum well (MQW) lasers with various doping concentrations in the p-AlInAs cladding layer are systematically studied. The lasers with higher doping exhibit lower series resistance, higher maximum output power, and better temperature characteristics, i.e. characteristic temperature as high as 90 K and degradation in slope efficiency as low as -0.66 dB, in the temperature range of 25 °C-70 °C. This is attributed to the significant reduction of electron leakage over the p-cladding layer.
|頁（從 - 到）||923-926|
|期刊||Journal of Crystal Growth|
|出版狀態||已出版 - 5月 1999|
|事件||Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes|
持續時間: 31 8月 1998 → 4 9月 1998