High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasers

Jen Wei Pan, Ming Hong Chen, Jen Inn Chyi

研究成果: 雜誌貢獻會議論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Strain-compensated 1.3 μm AlGaInAs/InP multiquantum well (MQW) lasers with various doping concentrations in the p-AlInAs cladding layer are systematically studied. The lasers with higher doping exhibit lower series resistance, higher maximum output power, and better temperature characteristics, i.e. characteristic temperature as high as 90 K and degradation in slope efficiency as low as -0.66 dB, in the temperature range of 25 °C-70 °C. This is attributed to the significant reduction of electron leakage over the p-cladding layer.

原文???core.languages.en_GB???
頁(從 - 到)923-926
頁數4
期刊Journal of Crystal Growth
201
DOIs
出版狀態已出版 - 5月 1999
事件Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
持續時間: 31 8月 19984 9月 1998

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